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2SB1481(TOJS,Q,M)

In Stock: 9,190
2SB1481(TOJS,Q,M) - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - Single
REF: 2SB1481(TOJS,Q,M) Toshiba Semiconductor and Storage
2SB1481(TOJS,Q,M)

Toshiba Semiconductor and Storage

TRANS PNP 100V 4A TO220NIS

2SB1481(TOJS,Q,M) is a Transistors - Bipolar (BJT) - Single manufactured by Toshiba Semiconductor and Storage. TRANS PNP 100V 4A TO220NIS. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-220-3 Full Pack, current - collector (ic) (max) 4 A.

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In Stock: 9,190

Specifications

13 parameters
Product StatusObsolete
Transistor TypePNP
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)100 V
Vce Saturation (Max) @ Ib, Ic1.5V @ 6mA, 3A
Current - Collector Cutoff (Max)2µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce2000 @ 3A, 2V
Power - Max2 W
Frequency - Transition-
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220NIS

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