2SA1931,BOSCHQ(J - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - Single
REF: 2SA1931,BOSCHQ(J Toshiba Semiconductor and Storage
2SA1931,BOSCHQ(J

Toshiba Semiconductor and Storage

TRANS PNP 50V 5A TO220NIS

2SA1931,BOSCHQ(J is a Transistors - Bipolar (BJT) - Single manufactured by Toshiba Semiconductor and Storage. TRANS PNP 50V 5A TO220NIS. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-220-3 Full Pack, current - collector (ic) (max) 5 A.

In Stock: 9,680

Specifications

13 parameters
Product StatusObsolete
Transistor TypePNP
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)50 V
Vce Saturation (Max) @ Ib, Ic400mV @ 200mA, 2A
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1A, 1V
Power - Max2 W
Frequency - Transition60MHz
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220NIS

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