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2SA1312GRTE85LF

In Stock: 1,431
2SA1312GRTE85LF - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - Single
REF: 2SA1312GRTE85LF Toshiba Semiconductor and Storage
2SA1312GRTE85LF

Toshiba Semiconductor and Storage

TRANS PNP 120V 0.1A SMINI

2SA1312GRTE85LF is a Transistors - Bipolar (BJT) - Single manufactured by Toshiba Semiconductor and Storage. TRANS PNP 120V 0.1A SMINI. Key specifications: mounting type Surface Mount, operating temperature 125°C (TJ), package / case TO-236-3, SC-59, SOT-23-3, current - collector (ic) (max) 100 mA.

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In Stock: 1,431

Specifications

13 parameters
Product StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)120 V
Vce Saturation (Max) @ Ib, Ic300mV @ 1mA, 10mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 6V
Power - Max150 mW
Frequency - Transition100MHz
Operating Temperature125°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageS-Mini

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