2SA1182-Y,LF - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - Single
REF: 2SA1182-Y,LF Toshiba Semiconductor and Storage
2SA1182-Y,LF

Toshiba Semiconductor and Storage

TRANS PNP 30V 0.5A SMINI

2SA1182-Y,LF is a Transistors - Bipolar (BJT) - Single manufactured by Toshiba Semiconductor and Storage. TRANS PNP 30V 0.5A SMINI. Key specifications: mounting type Surface Mount, operating temperature 125°C (TJ), package / case TO-236-3, SC-59, SOT-23-3, current - collector (ic) (max) 500 mA.

In Stock: 1,838

Specifications

13 parameters
Product StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)30 V
Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 100mA, 1V
Power - Max150 mW
Frequency - Transition200MHz
Operating Temperature125°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageS-Mini

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