2SA1013-O,T6MIBF(J

In Stock: 6,140
2SA1013-O,T6MIBF(J - Toshiba Semiconductor and Storage - Transistors - Bipolar (BJT) - Single
REF: 2SA1013-O,T6MIBF(J Toshiba Semiconductor and Storage
2SA1013-O,T6MIBF(J

Toshiba Semiconductor and Storage

TRANS PNP 160V 1A TO92L

2SA1013-O,T6MIBF(J is a Transistors - Bipolar (BJT) - Single manufactured by Toshiba Semiconductor and Storage. TRANS PNP 160V 1A TO92L. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-226-3, TO-92-3 Long Body, current - collector (ic) (max) 1 A.

In Stock: 6,140

Specifications

13 parameters
Product StatusObsolete
Transistor TypePNP
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)160 V
Vce Saturation (Max) @ Ib, Ic1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 200mA, 5V
Power - Max900 mW
Frequency - Transition50MHz
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 Long Body
Supplier Device PackageTO-92L

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