1SS307E,L3F - Toshiba Semiconductor and Storage - Diodes - Rectifiers - Single
REF: 1SS307E,L3F Toshiba Semiconductor and Storage
1SS307E,L3F

Toshiba Semiconductor and Storage

DIODE GEN PURP 80V 100MA SC79

1SS307E,L3F is a Diodes - Rectifiers - Single manufactured by Toshiba Semiconductor and Storage. DIODE GEN PURP 80V 100MA SC79. Key specifications: mounting type Surface Mount, package / case SC-79, SOD-523.

In Stock: 5,353

Specifications

13 parameters
Product StatusActive
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)80 V
Current - Average Rectified (Io)100mA
Voltage - Forward (Vf) (Max) @ If1.3 V @ 100 mA
SpeedSmall Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)-
Current - Reverse Leakage @ Vr10 nA @ 80 V
Capacitance @ Vr, F6pF @ 0V, 1MHz
Mounting TypeSurface Mount
Package / CaseSC-79, SOD-523
Supplier Device PackageSC-79
Operating Temperature - Junction150°C (Max)

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