RFQ List My Parts 0
Get a Quote Contact

TH58NYG2S3HBAI6

In Stock: 7,465
TH58NYG2S3HBAI6 - Kioxia America, Inc. - Memory
REF: TH58NYG2S3HBAI6 Kioxia America, Inc.
TH58NYG2S3HBAI6

Kioxia America, Inc.

IC FLASH 4GBIT PARALLEL 63BGA

TH58NYG2S3HBAI6 is a Memory manufactured by Kioxia America, Inc.. IC FLASH 4GBIT PARALLEL 63BGA. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 1.7V ~ 1.95V, package / case 63-BGA.

Request a Quote

In Stock: 7,465

Specifications

14 parameters
Product StatusActive
Memory TypeNon-Volatile
Memory FormatFLASH
TechnologyFLASH - NAND (SLC)
Memory Size4Gb (512M x 8)
Memory InterfaceParallel
Clock Frequency-
Write Cycle Time - Word, Page25ns
Access Time-
Voltage - Supply1.7V ~ 1.95V
Operating Temperature-40°C ~ 85°C (TA)
Mounting TypeSurface Mount
Package / Case63-BGA
Supplier Device Package63-BGA (9x11)

Related Products

S29GL01GP12TFI023 - Flip Electronics Flip Electronics S29GL01GP12TFI023 15.27000 RFQ HN27C256AG15 - Renesas Electronics America Inc Renesas Electronics America Inc HN27C256AG15 9.69000 RFQ CY7C1370S-200AXCKJ - Rochester Electronics, LLC Rochester Electronics, LLC CY7C1370S-200AXCKJ 27.20000 RFQ S29GL128P11TFI020 - Infineon Technologies Infineon Technologies S29GL128P11TFI020 7.08000 RFQ CY7C1425BV18-200BZC - Infineon Technologies Infineon Technologies CY7C1425BV18-200BZC 50.89000 RFQ CY7C0831V-133AC - Rochester Electronics, LLC Rochester Electronics, LLC CY7C0831V-133AC 44.26000 RFQ

Manufacturers in Memory

Intel Micron Technology Inc. ISSI, Integrated Silicon Solution Inc Rochester Electronics, LLC Winbond Electronics Alliance Memory, Inc. Macronix ATP Electronics, Inc. Silicon Motion, Inc. Flip Electronics GSI Technology Inc. GigaDevice Semiconductor (HK) Limited

Need a Quote for TH58NYG2S3HBAI6?

Submit your RFQ and get a quote within 24 hours.

Submit RFQ View All Memory
Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →