TPAR3J S1G - Taiwan Semiconductor Corporation - Diodes - Rectifiers - Single
REF: TPAR3J S1G Taiwan Semiconductor Corporation
TPAR3J S1G

Taiwan Semiconductor Corporation

DIODE AVALANCHE 600V 3A TO277A

TPAR3J S1G is a Diodes - Rectifiers - Single manufactured by Taiwan Semiconductor Corporation. DIODE AVALANCHE 600V 3A TO277A. Key specifications: mounting type Surface Mount, package / case TO-277, 3-PowerDFN.

In Stock: 2,849

Specifications

13 parameters
Product StatusActive
Diode TypeAvalanche
Voltage - DC Reverse (Vr) (Max)600 V
Current - Average Rectified (Io)3A
Voltage - Forward (Vf) (Max) @ If1.55 V @ 3 A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)120 ns
Current - Reverse Leakage @ Vr10 µA @ 600 V
Capacitance @ Vr, F58pF @ 4V, 1MHz
Mounting TypeSurface Mount
Package / CaseTO-277, 3-PowerDFN
Supplier Device PackageTO-277A (SMPC)
Operating Temperature - Junction-55°C ~ 175°C

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