RFQ List My Parts 0
Get a Quote Contact

STGP30H65DFB2

In Stock: 5,614
STGP30H65DFB2 - STMicroelectronics - Transistors - IGBTs - Single
REF: STGP30H65DFB2 STMicroelectronics
STGP30H65DFB2

STMicroelectronics

IGBT 600V 60A 258W TO220AB

STGP30H65DFB2 is a Transistors - IGBTs - Single manufactured by STMicroelectronics. IGBT 600V 60A 258W TO220AB. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-220-3, current - collector (ic) (max) 50 A.

Datasheet Request a Quote

In Stock: 5,614

Specifications

17 parameters
Product StatusActive
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)50 A
Current - Collector Pulsed (Icm)90 A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 30A
Power - Max167 W
Switching Energy270µJ (on), 310µJ (off)
Input TypeStandard
Gate Charge90 nC
Td (on/off) @ 25°C18.4ns/71ns
Test Condition400V, 30A, 6.8Ohm, 15V
Reverse Recovery Time (trr)115 ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220

Related Products

STGF10M65DF2 - STMicroelectronics STMicroelectronics STGF10M65DF2 1.66000 RFQ STGP5H60DF - STMicroelectronics STMicroelectronics STGP5H60DF 1.63000 RFQ FGS15N40LTF - Fairchild Semiconductor Fairchild Semiconductor FGS15N40LTF 0.51000 RFQ RJP30H1DPP-M1#T2 - Renesas Electronics America Inc Renesas Electronics America Inc RJP30H1DPP-M1#T2 1.71000 RFQ FGH80N60FD2TU - onsemi onsemi FGH80N60FD2TU 5.28000 RFQ FGB7N60UNDF - Fairchild Semiconductor Fairchild Semiconductor FGB7N60UNDF 1.03000 RFQ

Manufacturers in Transistors - IGBTs - Single

Microsemi Corporation Micro Commercial Co Toshiba Semiconductor and Storage IXYS Rectron USA Alpha & Omega Semiconductor Inc. NTE Electronics, Inc Sanken Sanyo SemiQ

Need a Quote for STGP30H65DFB2?

Submit your RFQ and get a quote within 24 hours.

Submit RFQ View All Transistors - IGBTs - Single
Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →