STGB20H65DFB2 - STMicroelectronics - Transistors - IGBTs - Single
REF: STGB20H65DFB2 STMicroelectronics
STGB20H65DFB2

STMicroelectronics

TRENCH GATE FIELD-STOP 650 V, 20

STGB20H65DFB2 is a Transistors - IGBTs - Single manufactured by STMicroelectronics. TRENCH GATE FIELD-STOP 650 V, 20. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-263-4, D²Pak (3 Leads + Tab), TO-263AA, current - collector (ic) (max) 40 A.

In Stock: 80

Specifications

17 parameters
Product StatusActive
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)40 A
Current - Collector Pulsed (Icm)60 A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 20A
Power - Max147 W
Switching Energy265µJ (on), 214µJ (off)
Input TypeStandard
Gate Charge56 nC
Td (on/off) @ 25°C16ns/78.8ns
Test Condition400V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr)215 ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Supplier Device PackageD2PAK-3

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