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MJD122-1

In Stock: 8,563
MJD122-1 - STMicroelectronics - Transistors - Bipolar (BJT) - Single
REF: MJD122-1 STMicroelectronics
MJD122-1

STMicroelectronics

TRANS NPN DARL 100V 8A TO251

MJD122-1 is a Transistors - Bipolar (BJT) - Single manufactured by STMicroelectronics. TRANS NPN DARL 100V 8A TO251. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-251-3 Short Leads, IPak, TO-251AA, current - collector (ic) (max) 8 A.

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In Stock: 8,563

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)8 A
Voltage - Collector Emitter Breakdown (Max)100 V
Vce Saturation (Max) @ Ib, Ic4V @ 80mA, 8A
Current - Collector Cutoff (Max)10µA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 4A, 4V
Power - Max20 W
Frequency - Transition-
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Supplier Device PackageTO-251 (IPAK)

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