ESM2012DV - STMicroelectronics - Transistors - Bipolar (BJT) - Single
REF: ESM2012DV STMicroelectronics
ESM2012DV

STMicroelectronics

TRANS NPN DARL 120V 120A ISOTOP

ESM2012DV is a Transistors - Bipolar (BJT) - Single manufactured by STMicroelectronics. TRANS NPN DARL 120V 120A ISOTOP. Key specifications: mounting type Chassis Mount, operating temperature 150°C (TJ), package / case ISOTOP, current - collector (ic) (max) 120 A.

In Stock: 2,218

Specifications

13 parameters
Product StatusObsolete
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)120 A
Voltage - Collector Emitter Breakdown (Max)120 V
Vce Saturation (Max) @ Ib, Ic1.5V @ 1A, 100A
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce1200 @ 100A, 5V
Power - Max175 W
Frequency - Transition-
Operating Temperature150°C (TJ)
Mounting TypeChassis Mount
Package / CaseISOTOP
Supplier Device PackageISOTOP®

Need a Quote for ESM2012DV?

Submit your RFQ and get a quote within 24 hours.

Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →