SILICON EPITAXIAL DIODE
DCD010-TB-E is a Diodes - Rectifiers - Arrays manufactured by Sanyo. SILICON EPITAXIAL DIODE. Key specifications: mounting type Surface Mount, package / case TO-236-3, SC-59, SOT-23-3.
In Stock: 7,649
| Product Status | Obsolete |
|---|---|
| Diode Configuration | 1 Pair Series Connection |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 20 V |
| Current - Average Rectified (Io) (per Diode) | 100mA |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 10 mA |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | - |
|---|---|
| Current - Reverse Leakage @ Vr | 100 nA @ 15 V |
| Operating Temperature - Junction | 125°C (Max) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | 3-CP |
Vishay General Semiconductor - Diodes Division
NXP USA Inc.
Taiwan Semiconductor Corporation
Nexperia USA Inc.
Panjit International Inc.
Micro Commercial Co
Toshiba Semiconductor and Storage
IXYS
Diotec Semiconductor
SMC Diode Solutions
GeneSiC Semiconductor
Yangzhou Yangjie Electronic Technology Co.,Ltd
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