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K4B4G1646E-BYK000

In Stock: 1,388
K4B4G1646E-BYK000 - Samsung Semiconductor, Inc. - Memory
REF: K4B4G1646E-BYK000 Samsung Semiconductor, Inc.
K4B4G1646E-BYK000

Samsung Semiconductor, Inc.

DDR3-1600 4GB (256MX16)1.25NS CL

K4B4G1646E-BYK000 is a Memory manufactured by Samsung Semiconductor, Inc.. DDR3-1600 4GB (256MX16)1.25NS CL.

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In Stock: 1,388

Specifications

14 parameters
Product StatusActive
Memory Type-
Memory Format-
Technology-
Memory Size-
Memory Interface-
Clock Frequency-
Write Cycle Time - Word, Page-
Access Time-
Voltage - Supply-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

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Manufacturers in Memory

Intel Micron Technology Inc. ISSI, Integrated Silicon Solution Inc Rochester Electronics, LLC Winbond Electronics Alliance Memory, Inc. Macronix ATP Electronics, Inc. Silicon Motion, Inc. Flip Electronics GSI Technology Inc. GigaDevice Semiconductor (HK) Limited

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