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K4B1G1646I-BYMA000

In Stock: 1,082
K4B1G1646I-BYMA000 - Samsung Semiconductor, Inc. - Memory
REF: K4B1G1646I-BYMA000 Samsung Semiconductor, Inc.
K4B1G1646I-BYMA000

Samsung Semiconductor, Inc.

DDR3-1866 1GB (64MX16)1.07NS CL1

K4B1G1646I-BYMA000 is a Memory manufactured by Samsung Semiconductor, Inc.. DDR3-1866 1GB (64MX16)1.07NS CL1.

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In Stock: 1,082

Specifications

14 parameters
Product StatusActive
Memory Type-
Memory Format-
Technology-
Memory Size-
Memory Interface-
Clock Frequency-
Write Cycle Time - Word, Page-
Access Time-
Voltage - Supply-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

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Manufacturers in Memory

Intel Micron Technology Inc. ISSI, Integrated Silicon Solution Inc Rochester Electronics, LLC Winbond Electronics Alliance Memory, Inc. Macronix ATP Electronics, Inc. Silicon Motion, Inc. Flip Electronics GSI Technology Inc. GigaDevice Semiconductor (HK) Limited

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