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CY7C1512KV18-200BZXI

In Stock: 29
CY7C1512KV18-200BZXI - Rochester Electronics, LLC - Memory
REF: CY7C1512KV18-200BZXI Rochester Electronics, LLC
CY7C1512KV18-200BZXI

Rochester Electronics, LLC

QDR SRAM, 4MX18, 0.45NS

CY7C1512KV18-200BZXI is a Memory manufactured by Rochester Electronics, LLC. QDR SRAM, 4MX18, 0.45NS. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 1.7V ~ 1.9V, package / case 165-LBGA.

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In Stock: 29

Specifications

14 parameters
Product StatusActive
Memory TypeVolatile
Memory FormatSRAM
TechnologySRAM - Synchronous, QDR II
Memory Size72Mb (4M x 18)
Memory InterfaceParallel
Clock Frequency200 MHz
Write Cycle Time - Word, Page-
Access Time-
Voltage - Supply1.7V ~ 1.9V
Operating Temperature-40°C ~ 85°C (TA)
Mounting TypeSurface Mount
Package / Case165-LBGA
Supplier Device Package165-FBGA (13x15)

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