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CY7C1361B-100BZI

In Stock: 47
CY7C1361B-100BZI - Rochester Electronics, LLC - Memory
REF: CY7C1361B-100BZI Rochester Electronics, LLC
CY7C1361B-100BZI

Rochester Electronics, LLC

CACHE SRAM, 256KX36, 8.5NS

CY7C1361B-100BZI is a Memory manufactured by Rochester Electronics, LLC. CACHE SRAM, 256KX36, 8.5NS. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 85°C (TA), voltage - supply 3.135V ~ 3.6V, package / case 165-LBGA.

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In Stock: 47

Specifications

14 parameters
Product StatusActive
Memory TypeVolatile
Memory FormatSRAM
TechnologySRAM - Synchronous, SDR
Memory Size9Mb (256K x 36)
Memory InterfaceParallel
Clock Frequency100 MHz
Write Cycle Time - Word, Page-
Access Time8.5 ns
Voltage - Supply3.135V ~ 3.6V
Operating Temperature-40°C ~ 85°C (TA)
Mounting TypeSurface Mount
Package / Case165-LBGA
Supplier Device Package165-FBGA (13x15)

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Intel Micron Technology Inc. ISSI, Integrated Silicon Solution Inc Winbond Electronics Alliance Memory, Inc. Macronix ATP Electronics, Inc. Silicon Motion, Inc. Flip Electronics GSI Technology Inc. GigaDevice Semiconductor (HK) Limited Everspin Technologies Inc.

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