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CY7C1325G-133BGXC

In Stock: 242
CY7C1325G-133BGXC - Rochester Electronics, LLC - Memory
REF: CY7C1325G-133BGXC Rochester Electronics, LLC
CY7C1325G-133BGXC

Rochester Electronics, LLC

CACHE SRAM, 256KX18, 6.5NS

CY7C1325G-133BGXC is a Memory manufactured by Rochester Electronics, LLC. CACHE SRAM, 256KX18, 6.5NS. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 70°C (TA), voltage - supply 3.15V ~ 3.6V, package / case 119-BGA.

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In Stock: 242

Specifications

14 parameters
Product StatusActive
Memory TypeVolatile
Memory FormatSRAM
TechnologySRAM - Synchronous, SDR
Memory Size4.5Mb (256K x 18)
Memory InterfaceParallel
Clock Frequency133 MHz
Write Cycle Time - Word, Page-
Access Time6.5 ns
Voltage - Supply3.15V ~ 3.6V
Operating Temperature0°C ~ 70°C (TA)
Mounting TypeSurface Mount
Package / Case119-BGA
Supplier Device Package119-PBGA (14x22)

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Intel Micron Technology Inc. ISSI, Integrated Silicon Solution Inc Winbond Electronics Alliance Memory, Inc. Macronix ATP Electronics, Inc. Silicon Motion, Inc. Flip Electronics GSI Technology Inc. GigaDevice Semiconductor (HK) Limited Everspin Technologies Inc.

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