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RJP65T43DPQ-A0#T2

In Stock: 2,406
RJP65T43DPQ-A0#T2 - Renesas Electronics America Inc - Transistors - IGBTs - Single
REF: RJP65T43DPQ-A0#T2 Renesas Electronics America Inc
RJP65T43DPQ-A0#T2

Renesas Electronics America Inc

IGBT TRENCH 650V 60A TO247A

RJP65T43DPQ-A0#T2 is a Transistors - IGBTs - Single manufactured by Renesas Electronics America Inc. IGBT TRENCH 650V 60A TO247A. Key specifications: mounting type Through Hole, operating temperature 175°C (TJ), package / case TO-247-3, current - collector (ic) (max) 60 A.

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In Stock: 2,406

Specifications

17 parameters
Product StatusActive
IGBT TypeTrench
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)60 A
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 20A
Power - Max150 W
Switching Energy170µJ (on), 130µJ (off)
Input TypeStandard
Gate Charge69 nC
Td (on/off) @ 25°C35ns/105ns
Test Condition400V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247A

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