RJP4301APP-M0#T2

In Stock: 3,821
RJP4301APP-M0#T2 - Renesas Electronics America Inc - Transistors - IGBTs - Single
REF: RJP4301APP-M0#T2 Renesas Electronics America Inc
RJP4301APP-M0#T2

Renesas Electronics America Inc

IGBT 430V TO200FL

RJP4301APP-M0#T2 is a Transistors - IGBTs - Single manufactured by Renesas Electronics America Inc. IGBT 430V TO200FL. Key specifications: mounting type Through Hole, operating temperature -40°C ~ 150°C (TJ), package / case TO-220-3 Full Pack, power - max 30 W.

In Stock: 3,821

Specifications

17 parameters
Product StatusActive
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)430 V
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)200 A
Vce(on) (Max) @ Vge, Ic10V @ 26V, 200A
Power - Max30 W
Switching Energy-
Input TypeStandard
Gate Charge-
Td (on/off) @ 25°C50ns/100ns
Test Condition300V, 200A, 30Ohm, 26V
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220FL

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