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RJH65D27BDPQ-A0#T2

In Stock: 7,086
RJH65D27BDPQ-A0#T2 - Renesas Electronics America Inc - Transistors - IGBTs - Single
REF: RJH65D27BDPQ-A0#T2 Renesas Electronics America Inc
RJH65D27BDPQ-A0#T2

Renesas Electronics America Inc

IGBT TRENCH 650V 100A TO247A

RJH65D27BDPQ-A0#T2 is a Transistors - IGBTs - Single manufactured by Renesas Electronics America Inc. IGBT TRENCH 650V 100A TO247A. Key specifications: mounting type Through Hole, operating temperature 175°C (TJ), package / case TO-247-3, current - collector (ic) (max) 100 A.

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In Stock: 7,086

Specifications

17 parameters
Product StatusActive
IGBT TypeTrench
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)100 A
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic1.65V @ 15V, 50A
Power - Max375 W
Switching Energy1mJ (on), 1.5mJ (off)
Input TypeStandard
Gate Charge175 nC
Td (on/off) @ 25°C20ns/165ns
Test Condition400V, 50A, 10Ohm, 15V
Reverse Recovery Time (trr)80 ns
Operating Temperature175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247A

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