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RJH60D5BDPQ-E0#T2

In Stock: 7,724
RJH60D5BDPQ-E0#T2 - Renesas Electronics America Inc - Transistors - IGBTs - Single
REF: RJH60D5BDPQ-E0#T2 Renesas Electronics America Inc
RJH60D5BDPQ-E0#T2

Renesas Electronics America Inc

IGBT 600V 75A 200W TO-247

RJH60D5BDPQ-E0#T2 is a Transistors - IGBTs - Single manufactured by Renesas Electronics America Inc. IGBT 600V 75A 200W TO-247. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-247-3, current - collector (ic) (max) 75 A.

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In Stock: 7,724

Specifications

17 parameters
Product StatusActive
IGBT TypeTrench
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)75 A
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 37A
Power - Max200 W
Switching Energy400µJ (on), 810µJ (off)
Input TypeStandard
Gate Charge78 nC
Td (on/off) @ 25°C50ns/130ns
Test Condition300V, 37A, 5Ohm, 15V
Reverse Recovery Time (trr)25 ns
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247

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