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RJH1CV7DPQ-E0#T2

In Stock: 1,023
RJH1CV7DPQ-E0#T2 - Renesas Electronics America Inc - Transistors - IGBTs - Single
REF: RJH1CV7DPQ-E0#T2 Renesas Electronics America Inc
RJH1CV7DPQ-E0#T2

Renesas Electronics America Inc

RJH1CV7DPQ - IGBT 1200V 70A

RJH1CV7DPQ-E0#T2 is a Transistors - IGBTs - Single manufactured by Renesas Electronics America Inc. RJH1CV7DPQ - IGBT 1200V 70A. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-247-3, current - collector (ic) (max) 70 A.

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In Stock: 1,023

Specifications

17 parameters
Product StatusObsolete
IGBT TypeTrench
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)70 A
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 35A
Power - Max320 W
Switching Energy3.2mJ (on), 2.5mJ (off)
Input TypeStandard
Gate Charge166 nC
Td (on/off) @ 25°C53ns/185ns
Test Condition600V, 35A, 5Ohm, 15V
Reverse Recovery Time (trr)200 ns
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247

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