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RJH1BF6RDPQ-80#T2

In Stock: 15,319
RJH1BF6RDPQ-80#T2 - Renesas Electronics America Inc - Transistors - IGBTs - Single
REF: RJH1BF6RDPQ-80#T2 Renesas Electronics America Inc
RJH1BF6RDPQ-80#T2

Renesas Electronics America Inc

IGBT

RJH1BF6RDPQ-80#T2 is a Transistors - IGBTs - Single manufactured by Renesas Electronics America Inc. IGBT. Key specifications: mounting type Through Hole, operating temperature 150°C (TJ), package / case TO-247-3, current - collector (ic) (max) 55 A.

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In Stock: 15,319

Specifications

17 parameters
Product StatusActive
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1100 V
Current - Collector (Ic) (Max)55 A
Current - Collector Pulsed (Icm)-
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 55A
Power - Max227.2 W
Switching Energy-
Input TypeStandard
Gate Charge-
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247

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