R1EV58256BDANBI#B2

In Stock: 2,061
R1EV58256BDANBI#B2 - Renesas Electronics America Inc - Memory
REF: R1EV58256BDANBI#B2 Renesas Electronics America Inc
R1EV58256BDANBI#B2

Renesas Electronics America Inc

IC EEPROM 256KB CMOS PRDP0028AB-

R1EV58256BDANBI#B2 is a Memory manufactured by Renesas Electronics America Inc. IC EEPROM 256KB CMOS PRDP0028AB-. Key specifications: mounting type Through Hole, operating temperature -40°C ~ 85°C (TA), voltage - supply 2.7V ~ 5.5V, package / case 28-DIP (0.600", 15.24mm).

In Stock: 2,061

Specifications

14 parameters
Product StatusObsolete
Memory TypeNon-Volatile
Memory FormatEEPROM
TechnologyEEPROM
Memory Size256Kb (32K x 8)
Memory InterfaceParallel
Clock Frequency-
Write Cycle Time - Word, Page10ms
Access Time85 ns
Voltage - Supply2.7V ~ 5.5V
Operating Temperature-40°C ~ 85°C (TA)
Mounting TypeThrough Hole
Package / Case28-DIP (0.600", 15.24mm)
Supplier Device Package28-DIP

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