Name: R1EV58064BDANBI#B2
Brand: Renesas Electronics America Inc
SKU: R1EV58064BDANBI#B2
Availability: InStock

REF: R1EV58064BDANBI#B2 Renesas Electronics America Inc

R1EV58064BDANBI#B2

Renesas Electronics America Inc

IC EEPROM 64KB C-MOS 28DIP

R1EV58064BDANBI#B2 is a Memory manufactured by Renesas Electronics America Inc. IC EEPROM 64KB C-MOS 28DIP. Key specifications: mounting type Through Hole, operating temperature -40°C ~ 85°C (TA), voltage - supply 2.7V ~ 5.5V, package / case 28-DIP (0.600", 15.24mm).

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In Stock: 7,324

Specifications

14 parameters

Product Status	Obsolete
Memory Type	Non-Volatile
Memory Format	EEPROM
Technology	EEPROM
Memory Size	64Kb (8K x 8)
Memory Interface	Parallel
Clock Frequency	-

Write Cycle Time - Word, Page	10ms
Access Time	100 ns
Voltage - Supply	2.7V ~ 5.5V
Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Through Hole
Package / Case	28-DIP (0.600", 15.24mm)
Supplier Device Package	28-DIP