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H5N2305P-E

In Stock: 310
H5N2305P-E - Renesas Electronics America Inc - Transistors - Bipolar (BJT) - Single
REF: H5N2305P-E Renesas Electronics America Inc
H5N2305P-E

Renesas Electronics America Inc

POWER FIELD-EFFECT TRANSISTOR

H5N2305P-E is a Transistors - Bipolar (BJT) - Single manufactured by Renesas Electronics America Inc. POWER FIELD-EFFECT TRANSISTOR.

Datasheet Request a Quote

In Stock: 310

Specifications

13 parameters
Product StatusActive
Transistor Type-
Current - Collector (Ic) (Max)-
Voltage - Collector Emitter Breakdown (Max)-
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Power - Max-
Frequency - Transition-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

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