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GN1L4M-T2-A

In Stock: 180,000
GN1L4M-T2-A - Renesas Electronics America Inc - Transistors - Bipolar (BJT) - Single, Pre-Biased
REF: GN1L4M-T2-A Renesas Electronics America Inc
GN1L4M-T2-A

Renesas Electronics America Inc

SMALL SIGNAL BIPOLAR TRANSISTOR

GN1L4M-T2-A is a Transistors - Bipolar (BJT) - Single, Pre-Biased manufactured by Renesas Electronics America Inc. SMALL SIGNAL BIPOLAR TRANSISTOR. Key specifications: mounting type Surface Mount, package / case SC-70, SOT-323, current - collector (ic) (max) 100 mA, power - max 150 mW.

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In Stock: 180,000

Specifications

14 parameters
Product StatusObsolete
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)47 kOhms
Resistor - Emitter Base (R2)47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce95 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic200mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition-
Power - Max150 mW
Mounting TypeSurface Mount
Package / CaseSC-70, SOT-323
Supplier Device PackageSC-70

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