FA4F4M-T1B-A - Renesas Electronics America Inc - Transistors - Bipolar (BJT) - Single, Pre-Biased
REF: FA4F4M-T1B-A Renesas Electronics America Inc
FA4F4M-T1B-A

Renesas Electronics America Inc

PROGRAM ADAPTER

FA4F4M-T1B-A is a Transistors - Bipolar (BJT) - Single, Pre-Biased manufactured by Renesas Electronics America Inc. PROGRAM ADAPTER. Key specifications: current - collector (ic) (max) 100 mA, power - max 200 mW.

In Stock: 2,600

Specifications

14 parameters
Product StatusObsolete
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)22 Ohms
Resistor - Emitter Base (R2)22 Ohms
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic200mV @ 250µ, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition-
Power - Max200 mW
Mounting Type-
Package / Case-
Supplier Device Package-

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