GA4F3M(0)-T1-A - Renesas - Transistors - Bipolar (BJT) - Single, Pre-Biased
REF: GA4F3M(0)-T1-A Renesas
GA4F3M(0)-T1-A

Renesas

GA4F3M - BUILT-IN RESISTOR BIPOL

GA4F3M(0)-T1-A is a Transistors - Bipolar (BJT) - Single, Pre-Biased manufactured by Renesas. GA4F3M - BUILT-IN RESISTOR BIPOL. Key specifications: mounting type Surface Mount, package / case SC-70, SOT-323, current - collector (ic) (max) 100 mA, power - max 150 mW.

In Stock: 63,000

Specifications

14 parameters
Product StatusObsolete
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor - Base (R1)2 kOhms
Resistor - Emitter Base (R2)2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic200mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA
Frequency - Transition-
Power - Max150 mW
Mounting TypeSurface Mount
Package / CaseSC-70, SOT-323
Supplier Device PackageSC-70

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