2SB1261(1)-AZ - Renesas - Transistors - Bipolar (BJT) - Single
REF: 2SB1261(1)-AZ Renesas
2SB1261(1)-AZ

Renesas

2SB1261 - PNP SILICON EPITAXIAL

2SB1261(1)-AZ is a Transistors - Bipolar (BJT) - Single manufactured by Renesas. 2SB1261 - PNP SILICON EPITAXIAL. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63, current - collector (ic) (max) 3 A.

In Stock: 6,207

Specifications

13 parameters
Product StatusObsolete
Transistor TypePNP
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)60 V
Vce Saturation (Max) @ Ib, Ic300mV @ 150mA, 1.5A
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 600mA, 2V
Power - Max2 W
Frequency - Transition50MHz
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252 (MP-3Z)

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