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2SA812B-T1B-AT

In Stock: 201,000
2SA812B-T1B-AT - Renesas - Transistors - Bipolar (BJT) - Single
REF: 2SA812B-T1B-AT Renesas
2SA812B-T1B-AT

Renesas

2SA812B-T1B-AT - PNP SILICON EPI

2SA812B-T1B-AT is a Transistors - Bipolar (BJT) - Single manufactured by Renesas. 2SA812B-T1B-AT - PNP SILICON EPI. Key specifications: mounting type Surface Mount, operating temperature 150°C (TJ), package / case TO-236-3, SC-59, SOT-23-3, current - collector (ic) (max) 100 mA.

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In Stock: 201,000

Specifications

13 parameters
Product StatusObsolete
Transistor TypePNP
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Vce Saturation (Max) @ Ib, Ic300mV @ 10mA, 100mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce90 @ 1mA, 6V
Power - Max200 mW
Frequency - Transition180MHz
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device Package3-MINIMOLD

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