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IMZ2A_R1_00001

In Stock: 1,175
IMZ2A_R1_00001 - Panjit International Inc. - Transistors - Bipolar (BJT) - Arrays
REF: IMZ2A_R1_00001 Panjit International Inc.
IMZ2A_R1_00001

Panjit International Inc.

COMPLEMENTARY DUAL GENERAL PURPO

IMZ2A_R1_00001 is a Transistors - Bipolar (BJT) - Arrays manufactured by Panjit International Inc.. COMPLEMENTARY DUAL GENERAL PURPO. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case SOT-23-6, current - collector (ic) (max) 150mA.

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In Stock: 1,175

Specifications

13 parameters
Product StatusActive
Transistor TypeNPN, PNP
Current - Collector (Ic) (Max)150mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 50mA, 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 6V
Power - Max300mW
Frequency - Transition180MHz, 140MHz
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-23-6
Supplier Device PackageSOT-23-6

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