Name: NXH50C120L2C2ES1G
Brand: onsemi
SKU: NXH50C120L2C2ES1G
Price: 77.88 USD
Availability: InStock

REF: NXH50C120L2C2ES1G onsemi

NXH50C120L2C2ES1G

IGBT MOD 1200V 50A 26DIP

NXH50C120L2C2ES1G is a Transistors - IGBTs - Modules manufactured by onsemi. IGBT MOD 1200V 50A 26DIP. Key specifications: mounting type Through Hole, operating temperature -40°C ~ 150°C (TJ), package / case 26-PowerDIP Module (1.199", 47.20mm), current - collector (ic) (max) 50 A.

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In Stock: 8,782

Specifications

15 parameters

Product Status	Active
IGBT Type	-
Configuration	Three Phase Inverter with Brake
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	50 A
Power - Max	20 mW
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 50A
Current - Collector Cutoff (Max)	250 µA

Input Capacitance (Cies) @ Vce	11.89 nF @ 20 V
Input	Three Phase Bridge Rectifier
NTC Thermistor	Yes
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	26-PowerDIP Module (1.199", 47.20mm)
Supplier Device Package	26-DIP