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NXH200T120H3Q2F2STNG

In Stock: 6,501
NXH200T120H3Q2F2STNG - onsemi - Transistors - IGBTs - Modules
REF: NXH200T120H3Q2F2STNG onsemi
NXH200T120H3Q2F2STNG

onsemi

80KW GEN-II Q2PACK-200A MODULE W

NXH200T120H3Q2F2STNG is a Transistors - IGBTs - Modules manufactured by onsemi. 80KW GEN-II Q2PACK-200A MODULE W. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 175°C (TJ), package / case Module, current - collector (ic) (max) 330 A.

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In Stock: 6,501

Specifications

15 parameters
Product StatusActive
IGBT TypeTrench Field Stop
ConfigurationHalf Bridge
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)330 A
Power - Max679 W
Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 200A
Current - Collector Cutoff (Max)500 µA
Input Capacitance (Cies) @ Vce35.615 nF @ 25 V
InputStandard
NTC ThermistorNo
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device Package56-PIM/Q2PACK (93x47)

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