Name: NVD5867NLT4G-TB01
Brand: onsemi
SKU: NVD5867NLT4G-TB01
Availability: InStock

REF: NVD5867NLT4G-TB01 onsemi

NVD5867NLT4G-TB01

MOSFET N-CH 60V 6A/22A DPAK-3

NVD5867NLT4G-TB01 is a Transistors - FETs, MOSFETs - Single manufactured by onsemi. MOSFET N-CH 60V 6A/22A DPAK-3. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

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In Stock: 1,081

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	6A (Ta), 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	39mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	675 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	3.3W (Ta), 43W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DPAK-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63