NTP8G202NG - onsemi - Transistors - FETs, MOSFETs - Single
REF: NTP8G202NG onsemi
NTP8G202NG

onsemi

GANFET N-CH 600V 9A TO220-3

NTP8G202NG is a Transistors - FETs, MOSFETs - Single manufactured by onsemi. GANFET N-CH 600V 9A TO220-3. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3.

In Stock: 2,017

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyGaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)8V
Rds On (Max) @ Id, Vgs350mOhm @ 5.5A, 8V
Vgs(th) (Max) @ Id2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs9.3 nC @ 4.5 V
Vgs (Max)±18V
Input Capacitance (Ciss) (Max) @ Vds760 pF @ 400 V
FET Feature-
Power Dissipation (Max)65W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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