NTMTSC1D6N10MCTXG

In Stock: 2,990
NTMTSC1D6N10MCTXG - onsemi - Transistors - FETs, MOSFETs - Single
REF: NTMTSC1D6N10MCTXG onsemi
NTMTSC1D6N10MCTXG

onsemi

MOSFET N-CH 100V 35A/267A 8TDFNW

NTMTSC1D6N10MCTXG is a Transistors - FETs, MOSFETs - Single manufactured by onsemi. MOSFET N-CH 100V 35A/267A 8TDFNW. Key specifications: mounting type Surface Mount, Wettable Flank, operating temperature -55°C ~ 175°C (TJ), package / case 8-PowerTDFN.

In Stock: 2,990

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C35A (Ta), 267A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs1.7mOhm @ 90A, 10V
Vgs(th) (Max) @ Id4V @ 650µA
Gate Charge (Qg) (Max) @ Vgs106 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7630 pF @ 50 V
FET Feature-
Power Dissipation (Max)5.1W (Ta), 291W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount, Wettable Flank
Supplier Device Package8-TDFNW (8.3x8.4)
Package / Case8-PowerTDFN

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