NTMSD3P303R2G - onsemi - Transistors - FETs, MOSFETs - Single
REF: NTMSD3P303R2G onsemi
NTMSD3P303R2G

onsemi

MOSFET P-CH 30V 2.34A 8SOIC

NTMSD3P303R2G is a Transistors - FETs, MOSFETs - Single manufactured by onsemi. MOSFET P-CH 30V 2.34A 8SOIC. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-SOIC (0.154", 3.90mm Width).

In Stock: 9,687

Specifications

17 parameters
Product StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C2.34A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs85mOhm @ 3.05A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds750 pF @ 24 V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)730mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOIC
Package / Case8-SOIC (0.154", 3.90mm Width)

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