NTMFS3D2N10MDT1G - onsemi - Transistors - FETs, MOSFETs - Single
REF: NTMFS3D2N10MDT1G onsemi
NTMFS3D2N10MDT1G

onsemi

PTNG 100V LOW Q3.2MOHM N-FET, HE

NTMFS3D2N10MDT1G is a Transistors - FETs, MOSFETs - Single manufactured by onsemi. PTNG 100V LOW Q3.2MOHM N-FET, HE. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerTDFN, 5 Leads.

In Stock: 3,574

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C19A (Ta), 142A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs3.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id4V @ 316µA
Gate Charge (Qg) (Max) @ Vgs71.3 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3900 pF @ 50 V
FET Feature-
Power Dissipation (Max)2.8W (Ta), 155W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package5-DFN (5x6) (8-SOFL)
Package / Case8-PowerTDFN, 5 Leads

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