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NTHL080N120SC1

In Stock: 8,484
NTHL080N120SC1 - onsemi - Transistors - FETs, MOSFETs - Single
REF: NTHL080N120SC1 onsemi
NTHL080N120SC1

onsemi

SILICON CARBIDE MOSFET, N-CHANNE

NTHL080N120SC1 is a Transistors - FETs, MOSFETs - Single manufactured by onsemi. SILICON CARBIDE MOSFET, N-CHANNE. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-247-3.

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In Stock: 8,484

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C44A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs110mOhm @ 20A, 20V
Vgs(th) (Max) @ Id4.3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs56 nC @ 20 V
Vgs (Max)+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds1670 pF @ 800 V
FET Feature-
Power Dissipation (Max)348W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3

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