NTH4L020N120SC1 - onsemi - Transistors - FETs, MOSFETs - Single
REF: NTH4L020N120SC1 onsemi
NTH4L020N120SC1

onsemi

SICFET N-CH 1200V 102A TO247

NTH4L020N120SC1 is a Transistors - FETs, MOSFETs - Single manufactured by onsemi. SICFET N-CH 1200V 102A TO247. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-247-4.

In Stock: 6,436

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C102A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs28mOhm @ 60A, 20V
Vgs(th) (Max) @ Id4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs220 nC @ 20 V
Vgs (Max)+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds2943 pF @ 800 V
FET Feature-
Power Dissipation (Max)510W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4L
Package / CaseTO-247-4

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