Name: NTD4960N-1G
Brand: onsemi
SKU: NTD4960N-1G
Availability: InStock

REF: NTD4960N-1G onsemi

NTD4960N-1G

MOSFET N-CH 30V 8.9A/55A IPAK

NTD4960N-1G is a Transistors - FETs, MOSFETs - Single manufactured by onsemi. MOSFET N-CH 30V 8.9A/55A IPAK. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-251-3 Short Leads, IPak, TO-251AA.

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In Stock: 5,243

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	8.9A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	22 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1300 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	1.07W (Ta), 35.71W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I-Pak
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA