NTD12N10-1G - onsemi - Transistors - FETs, MOSFETs - Single
REF: NTD12N10-1G onsemi
NTD12N10-1G

onsemi

MOSFET N-CH 100V 12A IPAK

NTD12N10-1G is a Transistors - FETs, MOSFETs - Single manufactured by onsemi. MOSFET N-CH 100V 12A IPAK. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-251-3 Short Leads, IPak, TO-251AA.

In Stock: 9,076

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs165mOhm @ 6A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds550 pF @ 25 V
FET Feature-
Power Dissipation (Max)1.28W (Ta), 56.6W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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