NSVMUN5312DW1T3G - onsemi - Transistors - Bipolar (BJT) - Arrays, Pre-Biased
REF: NSVMUN5312DW1T3G onsemi
NSVMUN5312DW1T3G

onsemi

TRANS NPN/PNP 50V BIPO SC88-6

NSVMUN5312DW1T3G is a Transistors - Bipolar (BJT) - Arrays, Pre-Biased manufactured by onsemi. TRANS NPN/PNP 50V BIPO SC88-6. Key specifications: mounting type Surface Mount, package / case 6-TSSOP, SC-88, SOT-363, current - collector (ic) (max) 100mA, power - max 250mW.

In Stock: 2,992

Specifications

14 parameters
Product StatusActive
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)22kOhms
Resistor - Emitter Base (R2)22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max250mW
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-88/SC70-6/SOT-363

Need a Quote for NSVMUN5312DW1T3G?

Submit your RFQ and get a quote within 24 hours.

Need components fast? Get pricing & lead time within 24 hours. Submit an RFQ →