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NSBA113EDXV6T1G

In Stock: 8,275
NSBA113EDXV6T1G - onsemi - Transistors - Bipolar (BJT) - Arrays, Pre-Biased
REF: NSBA113EDXV6T1G onsemi
NSBA113EDXV6T1G

onsemi

TRANS 2PNP PREBIAS 0.25W SOT563

NSBA113EDXV6T1G is a Transistors - Bipolar (BJT) - Arrays, Pre-Biased manufactured by onsemi. TRANS 2PNP PREBIAS 0.25W SOT563. Key specifications: mounting type Surface Mount, package / case 6-TSSOP, SC-88, SOT-363, current - collector (ic) (max) 100mA, power - max 250mW.

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In Stock: 8,275

Specifications

14 parameters
Product StatusActive
Transistor Type2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)1kOhms
Resistor - Emitter Base (R2)1kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce3 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 5mA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max250mW
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-88/SC70-6/SOT-363

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