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NJVNJD35N04G

In Stock: 4,279
NJVNJD35N04G - onsemi - Transistors - Bipolar (BJT) - Single
REF: NJVNJD35N04G onsemi
NJVNJD35N04G

onsemi

TRANS NPN DARL 350V 4A DPAK

NJVNJD35N04G is a Transistors - Bipolar (BJT) - Single manufactured by onsemi. TRANS NPN DARL 350V 4A DPAK. Key specifications: mounting type Surface Mount, operating temperature -65°C ~ 150°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63, current - collector (ic) (max) 4 A.

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In Stock: 4,279

Specifications

13 parameters
Product StatusLast Time Buy
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)350 V
Vce Saturation (Max) @ Ib, Ic1.5V @ 20mA, 2A
Current - Collector Cutoff (Max)50µA
DC Current Gain (hFE) (Min) @ Ic, Vce2000 @ 2A, 2V
Power - Max45 W
Frequency - Transition90MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageDPAK

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Manufacturers in Transistors - Bipolar (BJT) - Single

NXP USA Inc. Nexperia USA Inc. Microsemi Corporation Toshiba Semiconductor and Storage Diotec Semiconductor Central Semiconductor Corp Rectron USA NTE Electronics, Inc Sanken Sanyo Ampleon USA Inc.

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