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NGTD13T65F2WP

In Stock: 6,745
NGTD13T65F2WP - onsemi - Transistors - IGBTs - Single
REF: NGTD13T65F2WP onsemi
NGTD13T65F2WP

onsemi

IGBT TRENCH FIELD STOP 650V DIE

NGTD13T65F2WP is a Transistors - IGBTs - Single manufactured by onsemi. IGBT TRENCH FIELD STOP 650V DIE. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case Die.

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In Stock: 6,745

Specifications

17 parameters
Product StatusActive
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)120 A
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 30A
Power - Max-
Switching Energy-
Input TypeStandard
Gate Charge-
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie

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Manufacturers in Transistors - IGBTs - Single

Microsemi Corporation Micro Commercial Co Toshiba Semiconductor and Storage IXYS Rectron USA Alpha & Omega Semiconductor Inc. NTE Electronics, Inc Sanken Sanyo SemiQ

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