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NGD18N45CLBT4G

In Stock: 3,060
NGD18N45CLBT4G - onsemi - Transistors - IGBTs - Single
REF: NGD18N45CLBT4G onsemi
NGD18N45CLBT4G

onsemi

INSULATED GATE BIPOLAR TRANSISTO

NGD18N45CLBT4G is a Transistors - IGBTs - Single manufactured by onsemi. INSULATED GATE BIPOLAR TRANSISTO. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63, current - collector (ic) (max) 18 A.

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In Stock: 3,060

Specifications

17 parameters
Product StatusObsolete
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)500 V
Current - Collector (Ic) (Max)18 A
Current - Collector Pulsed (Icm)50 A
Vce(on) (Max) @ Vge, Ic2.3V @ 4.5V, 7A
Power - Max115 W
Switching Energy-
Input TypeLogic
Gate Charge-
Td (on/off) @ 25°C420ns/2.9µs
Test Condition300V, 1kOhm, 5V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252, (D-Pak)

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