Name: NGB8207ABNT4G
Brand: onsemi
SKU: NGB8207ABNT4G
Price: 0.62 USD
Availability: InStock

REF: NGB8207ABNT4G onsemi

NGB8207ABNT4G

INSULATED GATE BIPOLAR TRANSISTO

NGB8207ABNT4G is a Transistors - IGBTs - Single manufactured by onsemi. INSULATED GATE BIPOLAR TRANSISTO. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, current - collector (ic) (max) 20 A.

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In Stock: 31,696

Specifications

17 parameters

Product Status	Active
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	365 V
Current - Collector (Ic) (Max)	20 A
Current - Collector Pulsed (Icm)	50 A
Vce(on) (Max) @ Vge, Ic	2.2V @ 3.7V, 10A
Power - Max	165 W
Switching Energy	-
Input Type	Logic

Gate Charge	-
Td (on/off) @ 25°C	-
Test Condition	-
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	D2PAK